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劉博文副教授


劉博文副教授
現　職：專任副教授
學　歷：交通大學電子工程研究所博士
研究室：TB413
校內分機：22254
e-portfolio：劉博文教學網站
E-Mail：bwliu@mail.wfc.edu.tw
負責實驗室：
硬體工程實驗室　花明樓TB306
教授科目：工程數學、電子電路（實習）、數位邏輯設計（實習）
請益時間：
  • 週一 7~8節 花明樓 TB413
  • 週二 5~6節 花明樓 TB413
  • 週三 7~8節 花明樓 TB413
  • 週五 1 3~4節 花明樓 TB413
所屬中心：材料技術研究中心

專長

  • 嵌入式系統設計
  • 微電子工程


證照

  • 放射物質可發生游離輻射設備操作執照，行政院原子能委員會，非醫人字第6898號
  • 專業Linux網路管理工程師，財團法人中華民國電腦技能基金會，MLM0700037
  • 專業Linux系統管理工程師，財團法人中華民國電腦技能基金會，MLS0700083


數位學習課程


著作


期刊論文：
  • Bor Wen Liou, Y. H. Wu, C. L. Lee and T. F. Lei, "Thickness Effect on Hydrogen Plasma Treatment on Polycrystalline Silicon Thin Films," Applied Physics Letters, vol. 66, no. 22, pp. 3013-3014, May 1995. (2004 SCI impact factor 4.308)
  • Bor Wen Liou, C. L. Lee and T. F. Lei, "High Breakdown Voltage Schottky Barrier Diode Using p+-polycrystalline Silicon Diffused Guard Ring," Electronics Letters, vol. 31, no. 22, pp. 1950-1951, 1995. (2002 SCI impact factor 0.97)
  • Bor Wen Liou, C. L. Lee and T. F. Lei and Y. H. Wu, "Hydrogen and Oxygen Plasma Effects on Polycrystalline Silicon thin Films of Various Thickness," Japanese Journal of Applied Physics, part 1, vol. 36, no. 6A, pp. 3389-3395, June 1997. (2002 SCI impact factor 1.249)
  • Bor Wen Liou and C. L. Lee, "Applications of Total Reflection X-ray Fluorescence to Analysis of VLSI Micro Contamination," IEEE Transactions on Semiconductor Manufacturing, vol. 12, no. 2, pp. 266-268, May 1999. (2002 SCI impact factor 0.676)
  • Bor Wen Liou and C. L. Lee, "Variations of X-Ray Spectrum in Total Reflection X-Ray Fluorescence (TXRF) Analysis with Respect to Si Wafer Crystal Orientation for Different Incident Angles," Chinese Journal of Physics, vol. 37, no.6, pp.623-630, Dec. 1999. (2002 SCI impact factor 0.365)
  • Bor Wen Liou and C. L. Lee, "Characteristics of High Breakdown Voltage Schottky Barrier Diodes Using p+-polycrystalline-silicon Diffused-guard Ring,” Solid-State Electronics, vol. 44, Issue 4, pp. 631-638, Apr. 2000. (2004 SCI impact factor 1.210)
  • Bor Wen Liou and C. L. Lee, "Plasma Effects of Fluorine Implantation on As+-doped Polycrystalline Silicon Thin Films of Various Thicknesses," Thin Solid Films, vol. 379, Issue 1-2, pp.213-217, Dec. 2000. (2004 SCI impact factor 1.647)
  • Bor Wen Liou, Shu-Cheng Chang and Shui Jinn Wang,” Micro-structures of BF2+- and As+-doped Polycrystalline Silicon Thin Films of Various Thicknesses and Heat Treatments,” Thin Solid Films, vol. 473, issue 2, pp. 321-327, Feb. 2005. (2004 SCI impact factor 1.647) (NSC 91-2215-E-274-003)
  • Shui-Jinn Wang, Shu-Cheng Chang, Kai-Ming Uang, and Bor-Wen Liou,” Design and Fabrication of High breakdown Voltage 4H-SiC Schottky Barrier Diodes with Floating Metal Ring Edge Terminations,” Solid-State Electronics, vol. 49, Issue 3, pp. 437-444, 2005. (2004 SCI impact factor 1.210) (NSC 92-2215-E-274-002)
  • Kai-Min Uang, Shui-Jinn Wang, Shiue-Lung Chen, Chin-Kun Wu, Shu-Cheng Chang, Tron-Min Chen, and Bor-Wen Liou ,” High Power GaN-Based LEDs with Transparent Indium-Zinc-Oxide Films ,” Japanese Journal of Applied Physics, part 1, vol. 44, no. 4B, pp. 2516-2519, 2005. (2004 SCI impact factor 1.142)
  • Bor Wen Liou, Shu-Cheng Chang and Shui Jinn Wang,” Hydrogen and Oxygen Plasma Effects on the Un-doped and n-p Compensation-doped Single- and Multilayer Polycrystalline Silicon Resistor Films,” Japanese Journal of Applied Physics, part 1, vol. 44, no. 5A, pp. 2929-2935, 2005. (2004 SCI impact factor 1.142) (NSC 93-2215-E-274-001)
  • Shui-Jinn Wang, Chao-Hsuing Chen, Rong-Ming Ko, Yi-Cheng Kuo, Chin-Hong Wong, Chien-Hung Wu, Kai-Ming Uang, Tron-Min Chen, and Bor-Wen Liou, “Preparation of Tungsten Oxide Nanowires from Sputter-Deposited WCx Films Using an Annealing/oxidation Process,” Applied Physics Letters vol. 86, pp. 263103-1 to 263103-3, 2005. (2004 SCI impact factor 4.308)
  • Shui-Jinn Wang, Kai-Ming Uang, Shiue-Lung Chen, Yu-Cheng Yang, Shu-Cheng Chang, Tron-Min Chen, Chao-Hsuing Chen, and Bor-Wen Liou,” Use of Patterned Laser Lift-off and Electroplating Nickel Layer for the Fabrication of Vertical-structure GaN-based Light-emitting Diodes,” Applied Physics Letters vol. 87, pp. 011111-1 to 011111-3, 2005. (2004 SCI impact factor 4.308)
  • Shui-JinnWang, Chao-Hsuing Chen, Shu-Cheng Chang, Chin-HongWong, Kai-Ming Uang, Tron-Min Chen, Rong-Ming Ko and Bor-Wen Liou,”On the thermal annealing conditions for self-synthesis of tungsten carbide nanowires fromWCx films” Nanotechnology vol. 16, pp. 273–277, 2005. (2004 SCI impact factor 3.322)
  • Bor Wen Liou, Tron Min Chen, Chih Wei Chen, Kai Ming Uang, and Shui-Jinn Wang,” High Power Silicon Schottky Barrier Diodes with Different Edge Termination structures,” Japanese Journal of Applied Physics, vol. 44, no. 40, pp. L1244-1247, 2005. (2004 SCI impact factor 1.142)(NSC 93-2215-E-274-001)
  • Shui-Jinn Wang, Shu-Cheng Chang, Kai-Ming Uang, and Bor-Wen Liou,” Investigation of Au/Ti/Al Ohmic Contact to N-type 4H-SiC,” Solid-State Electronics, vol. 49, pp. 1937-1941, 2005. (2004 SCI impact factor 1.210) (NSC 93-2215-E-274-001)
  • Chao-Hsuing Chen, Shui-Jinn Wang, Rong-Ming Ko, Yi-Cheng Kuo, Kai-Ming Uang, ron-Min Chen, Bor-Wen Liou and Hao-Yi Tsai, “The influence of oxygen content in the sputtering gas on theself-synthesis of tungsten oxide nanowires on sputter-deposited tungsten films, Nanotechnology, vol. 17, pp. 213-217, 2006. (2004 SCI impact factor 3.322) (NSC 93-2215-E-274-001)
  • Kai-Ming Uang, Shui-Jinn Wang, Shiue-Lung Chen, Yu-Cheng Yang, Tron-Min Chen and Bor-Wen Liou,” Effect of Surface Treatment on the Performances of Vertical-structure GaN-based High-power LEDs with Electroplating Metallic Substrate”, Japanese Journal of Applied Physics, part 1, vol. 45, 4B, pp. 3436-3441, 2006. (2004 SCI impact factor 1.142) (NSC 93-2215-E-274-001)
  • Shui-Jinn Wang, Shiue-Lung Chen, Kai-Ming Uang, Wei-Chi Lee, Tron-Min Chen, Chao-Hsuing Chen, and Bor-Wen Liou,”The Use of Transparent Conducting Indium–Zinc Oxide Film as a Current Spreading Layer for Vertical-Structured High-Power GaN-BasedLight-Emitting Diodes,” IEEE Photonics Technology Letters, vol. 18, No. 10, pp. 1146-1148, 2006.
  • Shui-Jinn Wang, Tron-Min Chen, Kai-Ming Uang, Shiue-Lung Chen, Tung-Sheng Hsiao, Shu-Cheng Chang, Hon-Yi Kuo, and Bor-Wen Liou,” A Vertical-structured Ni/GaN Schottky Barrier Diode Using Electroplating Nickel Substrate,” Japanese Journal of Applied Physics, vol. 45, no. 22, pp. L555-558, 2006. (NSC 94-2215-E-274-003)
  • Kai-Ming Uang, Shui-Jinn Wang, Shiue-Lung Chen, Tron-Min Chen, and Bor-Wen Liou,” The use of Transparent Indium-Zinc Oxide/(oxidized-Ni/Au) Ohmic Contact to GaN-based Light-Emitting Diodes for Light Output Improvement,” Thin Solid Films, vol. 515, Issue 4, pp. 2501-2506, 2006.
  • Shiue-Lung Chen, Shui-Jinn Wang, Kai-Ming Uang, Tron-Min Chen, Wei-Chi Lee, and Bor-Wen Liou,” Fabrication of Dicing-Free Vertical-Structured High-Power GaN-Based Light-Emitting Diodes With Selective Nickel Electroplating and Patterned Laser Liftoff Techniques,” IEEE Photonics Technology Letters, vol. 19, No. 6, pp. 351-353, 2007.
  • Rong-Ming Ko, Shui-Jinn Wang, Zhi-Fu Wen, Jun-Ku Lin, Ga-Hong Fan, Wen-I Shu, and Bor-Wen Liou,” Development of Gas sensors based on tungsten oxide nanowires in a metal/SiO2/metal structure and their sensing responses to NO2, ” Japanese Journal of Applied Physics, special issus vol.47, no. 4, pp.3272-3276, May 2008.
  • Bor Wen Liou,” Design and fabrication of high breakdown voltage silicon Schottky barrier diodes using various edge termination structures,” in press, accepted for publication(TSF-D-08-00498,doi:10.1016/j.tsf.2009.04.031), Available online 17 April 2009 in Thin State Films.
  • Rong-Ming Ko, Shui-Jinn Wang, Wei-Chih Tsai, Bor-Wen Liou and Yan-Ru Lin, “The evolution of tungsten oxide nanostructures from nanowires to nanosheets, “in press, accepted for publication (B-902493J) in Crystal Engineering Communications (2009). (SCI)
  • Bor-Wen Liou ,” High photovoltaic efficiency of InxGa1-xN/GaN based-solar cells with a multiple-quantum-well structure on SiCN/Si (111) substrates,” in press, accepted for publication (RP090047, DOI: 10.1143/JJAP.48.dummy), vol.48, no.7, pp. Available online 6 June 2009 in Japanese Journal of Applied Physics.
  • 劉博文, ”OGQC目檢異常分析報告”, 發表於世界先進積體電路公司之內部機密操作手冊, December 1996.
  • 劉博文, "VPD/TXRF的基本原理和在半導體製程的應用,"國科會之科儀新知，二十卷第五期(109)，pp. 68-83, 1999年4月
  • 劉博文, "高崩潰電壓之蕭基二極體元件之製作,” 國科會之電子月刊, 52 期(第五卷第十一期)，pp. 148-157, Nov. 1999
  • 劉博文, "Mercury Probe之量測技術與在半導體製程之應用,"國科會之科儀新知，二十一卷第一期(111)，pp. 65-75, 1999年8月
  • 劉博文, "SRP之量測技術與在半導體製程之應用,"國科會之科儀新知,” 二十一卷第四期(114)，pp. 73-82, 2000年2月
  • 劉博文, "SPV之量測技術與在半導體製程之應用," 國科會之科儀新知，二十一卷第五期(115)，pp. 73-86, 2000年4月
  • 劉博文, "磊晶晶片成長技術之簡介,"國科會之科儀新知,” 二十一卷第六期(116)，pp. 28-39 , 2000年6月
  • Bor Wen Liou, C. L. Lee, and Mei Ying Chung, "Collection efficiency of metallic iImpurities for vapor phase decomposition/total reflection X-ray fluorescence analysis,"吳鳳學報, vol. 8, pp.140-152, 2000.
  • Bor Wen Liou, "A study of Schottky barrier diodes with high breakdown voltage,”吳鳳學報, vol. 8, pp.334-356, 2000.
  • Bor Wen Liou, "Thickness effect on fluorine effects on As+-doped polycrystalline silicon thin films, "吳鳳學報, vol. 8, pp. 70-85, 2000.
  • 劉博文, "Mercury probe量測技術之簡介,"吳鳳學報, vol. 8, pp. 122-139, 2000.
  • 劉博文, "SPV量測技術之簡介,"吳鳳學報, vol. 8, pp. 101-121, 2000.
  • 劉博文, "SRP量測技術之簡介,"吳鳳學報, vol. 8, pp. 86-100, 2000.
  • 陳居毓、劉博文, "被動元件表面印刷自動檢查系統," 吳鳳學報, vol. 8, pp.180-192, 2000.
  • Bor Wen Liou, “半導體製程與元件可靠度之分析,”吳鳳學報, vol. 9, pp. 117-129, 2001.
  • Bor Wen Liou, “Bond Pad上有Polyimide殘留與Memory Cell 斑點缺陷分析及目前解決方法,”吳鳳學報, vol. 10, pp. 31-38, 2002.
  • 劉博文, " DRAM之異常異物、Laser-Mark 與Poly-Fuse 橋接缺陷分析及目前解決方法,”吳鳳學報, vol. .11, pp.341-348, 2003.


研討會論文：
  • Bor-Wen Liou*, and Jhe Yu Lin, ”Design and Fabrication of Triode Field Emission Device with Self-Synthesized Tungsten-Based Nanowires,” Oral presentation in 2008 International Conference on Safety & Security Management and Engineering Technology 2008 (ICSSMET2008), A1-062, WIT, Nov. 29, Chiayi, R.O.C.
  • Ga-Hong Fan, Rong-Ming Ko, Bor-Wen Liou, and Wei-Chih Tsai, and Shui-Jinn Wang* ,” Use of Current Fusing Method for the Fabrication of Nano Gaps with Self-Synthesized Tungsten-Based Nanowires,” Oral presentation in 2008 Electronic Materials Conference, Santa Barbara, California, June 25-27, 2008.
  • R. M. Ko, Z. F. Wen, S. J. Wang, J. K. Lin, G. H. Fan, W. I. Shu, B. W. Liou,“Development of gas sensors based on tungsten oxide nanowires in a metal/SiO2/ /metal structure and their sensing responses to NO2”, oral presentation in International Conference on Solid State Devices and Materials (Sep.20-22, 2007), pp. 314-315, Tsukuba, Japan.
  • Rong-Ming Ko, Shui-Jinn Wang, Bor-Wen Liou, Zhi-Fu Wen, Wei-Chih, Tsai, Jun-Ku Lin, Ga-Hong Fan and Wen-I Shu, “Gas sensors with vertical/horizontal tungsten oxide nanowire configurations and heir sensing performances to NO2,” Symposium on Nano Device Technology 2007 (SNDT2007), poster no. T3-13, NDL, Hsinchu, Taiwan, April 26-28, 2007.
  • Rong-Ming Ko, Shui-Jinn Wang, Bor-Wen Liou, Zhi-Fu Wen, Wei-Chih, Tsai, Jun-Ku Lin, Ga-Hong Fan and Wen-I Shu, “Fabrication of lateral field-emission devices based on self-systhesis tungsten oxide nanowires,” Symposium on Nano Device Technology 2007 (SNDT2007), poster no. T6-43, NDL, Hsinchu, Taiwan, April 26-28, 2007.
  • Shui-Jinn Wang, Tron-Min Chen, Kai-Ming Uang, Shiue-Lung Chen, Der-Ming Kuo, Hon-Yi Kuo, Bor-Wen Liou and Su-Hua Yang, "Junction Temperature and Thermal Resistance Measurement in High-Power Light Emitting Diodes Using A Real-Time Diode Forward Voltage Sampling Technique," oral presentation in International Conference on Solid State Devices and Materials (Sep., 2006) in Yokohama, Japan.
  • Tron-Min Chen, Kai-Ming Uang, Shui-Jinn Wang and Bor-Wen Liou, "Use of Anisotropic Laser Etching and Transparent Conducting Layer to Alleviate Current Crowding Effe" oral presentation in 64rd Annual Device Research Conference, pp. 29-30, in The Pennsylvania State University, University Park, PA_USA on June 26-28, 2006.
  • Kai-Ming Uang, Shui-Jinn Wang, Shiue-Lung Chen, Tron-Min Chen and Bor-Wen Liou, ”"Fabrication of High-Power Vertical GaN Based Light-Emitting Diodes with Selective Ni electroplating," poster in 64rd Annual Device Research Conference, pp. 137-138, in The Pennsylvania State University, University Park, PA_USA on June 26-28, 2006.
  • Kai-Ming Uang, Shui-Jinn Wang, Shiue-Lung Chen, Yu-Cheng Yang,Tron-Min Chen, and Bor-Wen Liou, ” Effect of Surface Treatment on the Performances of Vertical-structure GaN-based High-power LEDs with Electroplating Metallic Substrate,” oral presentation in International Conference on Solid State Devices and Materials (Sep. 14, 2005) in Kobe, Japan.
  • Shui-Jinn Wang, Shiue-Lung Chen, Kai-Ming Uang, Yu-Cheng Yang, Tron-Min Chen1, and Bor-Wen Liou,” Effect of Surface Treatment on the performances of Vertical-structured GaN-based LEDs with Electroplating Metallic Substrate,” poster (Session III Poster Session III-10) 63rd Annual Device Research Conference in Santa Barbara CA_USA ( June 20-22, 2005).
  • Shui-Jinn Wang, Shu-Cheng Chang, Kai-Ming Uang, Bor-Wen Liou, “ Vertical-structured Ni/n-GaN Schottky Diode with Electroplating Nickel Substrate,” poster (Session III Poster Session III-2) in 63rd Annual Device Research Conference in Santa Barbara CA_USA ( June 20-22, 2005).
  • hu-Cheng Chang (張書誠), Jr-Hua Liu (劉智華), Jr-Ming Siyu (許智明), Jun-Rui Huang (黃俊瑞), Kai-Ming Uang (汪楷茗), Shui-Jinn Wang (王水進), and Bor-Wen Liou (劉博文), “高電壓碳化矽蕭基二極體之研製及特性研究,”中華民國第二十四屆電力工程研討會, pp.1778-1781, 2003
  • 陳學龍, 汪楷茗, 吳晉坤, 張書誠, 王水進, 劉博文,”The use of Indium-Zinc-Oxide films as a transparent conduction layer for the fabrication of GaN-based LEDs,” 2003年中華民國電子元件暨材料研討會, pp. 450-402, 2003.
  • 汪楷茗 陳學龍 吳晉坤 張書誠 王水進 劉博文,”透明IZO導電薄膜於改善GaN-基LED光析出之應用研究,” 2003年中華民國鍍膜年會成果發表會, p. D04, 2003.
  • Bor Wen Liou, "Characteristics of H2 Plasma and O2 Plasma Treatments on Polycrystalline Silicon Thin Films,’’ The 2002 R&D Achievement Forum of Changhua-Yunlin-Chiayi Regional Colleges University(彰雲嘉地區大專校院2002年研發成果發表會),電機電子類p. B9-3, Dec. 2002.
  • Bor Wen Liou, "Numerical Simulation and Analysis of Schottky Barrier Diode,’’The 2002 R&D Achievement Forum of Changhua-Yunlin-Chiayi Regional Colleges University (彰雲嘉地區大專校院2002年研發成果發表會),電機電子類p. B6-2, Dec. 2002.
  • Bor Wen Liou, “Micro-contamination Effect on the Bonding-pad Region of DRAM,”第十七屆全國技術及教育研討會, 工業類(電子組), pp 1095-1104. 2002.
  • Bor Wen Liou, “The Collection Efficiency of Metallic Impurities for Vapor Phase Decomposition on Total Reflection X-Ray Fluorescence Analysis,” Proceeding of 2001 R&D Results Announcement of Yunlin-Chiayi and University, pp. 41-46, 2001.
  • Bor Wen Liou, “The Use of Polycrystalline Silicon Guard Ring To Improve Breakdown Voltage of Schottky Diode,” 第一屆全國技專校院工程技術類產學合作暨技術移轉成果發表會,電機類pp. 5-1~5-3, June. 2001.
  • Bor Wen Liou, “Thickness Effect on the Micro-structures of BF2+- and As+-Doped Polycrystalline Silicon Thin Films,”第十六屆全國技術及教育研討會, 工業類(電子組), pp.81-89 Apr. 2001.
  • 劉博文, "The fabrication of Schottky barrier diode with high breakdown voltage,” 第十五屆全國技術及教育研討會, 工業類(電子組), pp. 37-46, Apr. 2000.


專利

  • 新型，管材切割機，申請號碼098201244，連煥成、劉博文、李志芳、張志誠、吳威迪、李永振，1/22/2009提出
  • 新型，多量子井結構的太陽能電池，申請號碼098201246，劉博文，1/22/2009提出
  • 新型，氮化銦鎵半導體製作的太陽能電池，(98)智專一(四)04212字第09840941260號，劉博文，6/6/2009
  • 新型，瓦斯安全防護系統，申請號碼098200095，劉博文、連煥成、蔡惠秋、李永振，5/5/2009核准
  • 發明，GaN系之多接面串疊型太陽能電池，申請案號96138878，劉博文、管 鴻，8/31/2007提出
  • 發明，具有碳化矽基板之高效能太陽能電池，申請案號96138876，劉博文、管 鴻，8/23/2007提出
  • 發明，GaN系光電半導體之高效能太陽能電池，申請案號96138877，劉博文、管 鴻，8/21/2007提出
  • 發明，一種耦合饋入蝴蝶形左手/右手圓極化微帶天線，申請案號 095132208，連煥成、劉博文、蔡惠秋，8/31/2006提出
  • 發明，蕭基二極體之製造方法，發明第 I 261362，劉博文，7/13/2006


計畫

  • 高效能氮化銦鎵太陽能電池之研製與應用之研究(NSC 97-2221-E-274-012) ，主持人，97年8月至98年7月
  • 林哲裕，鎢-基奈米線三極場發射元件閘極侷限圖案之模擬與設計(NSC 97-2815-C-274-002-E )，主持人(指導教授)，97年7月至98年2月
  • 低溫自組式合成W-基材料與矽奈米線及其三極場發射源之應用(I)(NSC96-2221-E-274-012)，主持人，96年8月至97年7月
  • 廖昭凱，大面積垂直式結構LED高效率電極幾何圖案之模擬與設計(NSC 96-2815-C-274-001-E )，主持人(指導教授)，96年7月至97年2月
  • 沈旻昕，新穎U型溝渠井及RESURF型新穎結構LDMOSFET元件之模擬與設計(NSC 95-2815-C-274-002-E )，主持人(指導教授)，95年7月至96年2月
  • 可有效提高崩潰電壓與降低特定導通電阻之U型井溝渠型及RESURF型新穎結構LDMOSFET之設計與研製(I) (NSC 94-2215-E-274-003)，主持人，94年8月至95年7月
  • 具高崩潰電壓、低順向壓降、可調蕭基位障高度、與低功率損耗溝渠式金屬TOPS新穎結構蕭特基二極體之研製(III)(NDL-94S-C003)，主持人，94年7月至95年6月，國家奈米元件實驗室(NDL)
  • 具高崩潰電壓、低特定導通電阻與低功率損耗之U型井溝渠型及RESURF型新穎結構LDMOSFET之設計與研製(I) (NSC 93-2215-E-274-001)，主持人，93年8月至94年7月
  • 利用雙金屬電極深寬度、溝渠式深寬大小之調變，製作具低順向壓降、低漏電電流、高崩潰電壓與低功率損耗之新穎蕭基二極體之研發(NDL-93S-C121)，主持人，93年7月至94年7月，國家毫微米實驗室(NDL)
  • 具高崩潰電壓、低順向壓降、可調蕭基位障高度、與低功率損耗溝渠式金屬TOPS新穎結構蕭特基二極體之研製(II)(NDL-92S-C005)，主持人，93年7月至94年7月，國家毫微米實驗室(NDL)




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